Characterizing Polymer bound PAG Type EUV Resist

Report on EUV resist and process limitations

EUV lithography (λ=13.4nm) has been identified as one of the technologies likely to succeed to 193nm lithography for the definition of ever-smaller transistor architectures. Whether EUV in the end will outrank competing technologies for the 32nm and 22nm nodes (Hyper NA immersion, maskless, nanoimprint) and whether EUV will make it to mass production of integrated circuits will depend on both E...

Recent Progress of EUV Resist Technology in EIDEC

EUV lithography is one of the promising technologies for manufacturing devices at 16 nm half-pitch node and below. EUV resists are required to improve the resolution, line width roughness (LWR), and sensitivity. However it is generally thought that the lithographic performance is determined by the trade-off relationship among these factors. Moreover, resist outgassing is another issue with EUV ...

Modeling of EUV photoresists with a resist point spread function

Extreme ultraviolet (EUV) lithography is under development for possible deployment at the 32-nm technology node. One active area of research in this field is the development of photoresists that can meet the stringent requirements (high resolution, high sensitivity, low LER, etc.) of lithography in this regime. In order to facilitate research in this and other areas related to EUV lithography, ...

Polymer Bound Elastase Inhibitors

Euv Flare Activity in Late-type Stars

Extreme Ultraviolet Explorer Deep Survey observations of cool stars (spectral type F to M) have been used to investigate the distribution of coronal flare rates in energy and its relation to activity indicators and rotation parameters. Cumulative and differential flare rate distributions were constructed and fitted with different methods. Power laws are found to approximately describe the distr...